快闪存储器的编程电路、编程方法及快闪存储器技术

本发明专利技术涉及一种快闪存储器的编程电路及编程方法，该编程电路包括串联的编程晶体管和存储单元，所述编程晶体管的栅极接字线，存储单元的栅极连接控制栅，所述编程晶体管的一端与位线相连，另一端与所述存储单元的一端相连，存储单元的另一端与源线相连。通过本发明专利技术编程电路和方法对快闪存储器进行编程，可以在不增加沟道电流的情况下，提高后段编程的效率，从而提高整个编程过程的效率，缩短总的编程时间，提高闪存性能。

Flash memory programming circuit, programming method and flash memory

The invention relates to a programming circuit and a programming method of a flash memory, the programming circuit includes a programming transistor and a storage unit in series, the gate of the programming transistor is connected with a word line, the gate of the storage unit is connected with a control gate, one end of the programming transistor is connected with a bit line, the other end is connected with one end of the storage unit, the other end of the storage unit is connected with a source line \u3002 The flash memory can be programmed by the programming circuit and method of the invention, which can improve the efficiency of the later stage programming without increasing the channel current, thereby improving the efficiency of the whole programming process, shortening the total programming time and improving the flash memory performance.

【技术实现步骤摘要】
【国外来华专利技术】PCT国内申请，说明书已公开。

【技术保护点】
PCT国内申请，权利要求书已公开。/n

【技术特征摘要】
【国外来华专利技术】PCT国内申请，...

【专利技术属性】
技术研发人员：王井舟，倪红松，王明，王腾锋，宁丹，
申请(专利权)人：成都锐成芯微科技股份有限公司，
类型：发明
国别省市：四川;51